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采用射频磁控溅射制备了具有特殊层状纳米结构的碲化铋热电薄膜.以Bi2Te3为靶材,在不同基底温度和沉积时间下制备了薄膜,并利用X射线衍射、扫描电镜和X射线能谱等对样品进行了结构和成分分析,同时测试了薄膜的电导率和Seebeck系数.结果表明,基底温度是影响薄膜微结构和热电性能的关键因素之一,较高的基底温度利于层状结构的形成和功率因子的提高,400℃基底温度下制备薄膜的功率因子最优.然而,所有薄膜均显示不同程度偏离Bi2Te3的化学计量比而缺Te,优化薄膜成分有望进一步提高薄膜的热电性能.
The bismuth telluride thermoelectric thin films with special layered nanostructures were prepared by radio-frequency magnetron sputtering.The films were prepared at different substrate temperature and deposition time with Bi2Te3 as target material. X-ray diffraction, scanning electron microscopy and X-ray diffraction The structure and composition of the samples were analyzed by energy spectrum and the conductivity and Seebeck coefficient of the films were tested.The results show that the substrate temperature is one of the key factors affecting the microstructure and thermoelectric properties of the films, The formation of the structure and the increase of the power factor show that the power factor is the best for the films prepared at the substrate temperature of 400 ° C. However, all the films show deviations from the stoichiometric ratio of Bi2Te3 and the absence of Te, and the optimized film composition is expected to further improve the thermoelectric properties of the films .