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A silicon(SiNW) nanowire device,made by the bottom-up method,has been assembled in a MEMS device for measuring stress in cantilevers.The process for assembling a SiNW on a cantilever has been introduced.The current as a function of the voltage applied to a SiNW have been measured,and the different resistances before and after cantilever releasing have been observed.A parameter,η,has been derived based on the resistances.For a fixed sample,a linear relationship between η and the stress in the cantilever has been observed;and,so,it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.
A silicon (SiNW) nanowire device, made by the bottom-up method, has been assembled in a MEMS device for measuring stress in cantilevers. The process for assembling a SiNW on a cantilever has been introduced. Current. A function of the voltage applied to a SiNW have been measured, and the different resistances before and after cantilever releasing have been observed. A parameter, η, has been derived based on the resistances.For a fixed sample, a linear relationship between η and the stress in the cantilever has been observed; and, so, it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.