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Chemically vapor deposited diamond films were etched at different parameters usingoxygen plasma produced by a DC (direct current) glow discharge and then polished by a modifiedmechanical polishing device.Scanning electron microscope,atomic force microscope and Ramanspectrometer were used to evaluate the surface states of diamond films before and after polishing.It was found that a moderate plasma etching would produce a lot of etch pits and amorphouscarbon on the top surface of diamond film.As a result,the quality and the efficiency of mechanicalpolishing have been enhanced remarkably.
Chemically vapor deposited diamond films were etched at different parameters usingoxygen plasma produced by a DC (direct current) glow discharge and then polished by a modified magic polishing device. Scanning electron microscope, atomic force microscope and Ramanspectrometer were used to evaluate the surface states of diamond films before and after polishing. It was found that a moderate plasma etching would produce a lot of etch pits and amorphouscarbon on the top surface of diamond film. As a result, the quality and the efficiency of mechanical pollution have been remarkablyably modified.