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用CWCO_2激光器已把淀积到硅片上的金引入到了硅中.硅中金的表面浓度达到4×10~(11)cm~(-3).用SIMS和DLTS技术研究了掺杂行为.
Gold deposited onto silicon wafers has been introduced into silicon using a CWCO 2 laser, and the surface concentration of gold in silicon reaches 4 × 10 ~ (11) cm ~ (-3). The doping behavior was studied by SIMS and DLTS techniques.