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作为双极型功率MOSFET的IGBT(绝缘栅双极晶体管)即将进入正式实用期,其研究开发也已到了追求极限性能的阶段。在形成沟道的阴极侧使用自对准技术来实现微细化、并使导通电压下降。在阳极-发射极采用短路结构,缩短了关断时间。另外,即使不进行缩短寿命的控制,也能做出40kHz高速工作的功率IC用的横向型IGBT。
As bipolar power MOSFET IGBT (Insulated Gate Bipolar Transistor) is about to enter the official practical period, its research and development has also been to the pursuit of the ultimate performance stage. A self-alignment technique is used to achieve miniaturization on the cathode side where the channel is formed, and the on-voltage is reduced. In the anode - emitter short circuit structure, reducing the turn-off time. In addition, a lateral IGBT for a power IC operating at a high speed of 40 kHz can be produced without controlling for a shortened lifetime.