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红外(热)成象是电荷耦合器件应用的一个重要领域,因为电荷耦合器件提供了相当容易地与大量探测器结合的可能,因而有可能消除或减少机械扫描。在这方面非本征硅红外探测器有特殊的意义。本文理论计算出作为截止波长函数,也即作为掺杂电离能函数时非本征硅探测器的性能。发现工作于3～5微米或8～14微米波段有一个最佳电离能,它等效于截止波长并趋于短波端。在77K工作时,对3～5微米波段,最佳截止波长大约是3.6微米(0.34电子伏),对8～14微米波段大约是10微米(0.12电子伏)。计算认为,在其它条件相同情况下,使用具有最佳截止波长的杂质时,在3～5微米波段与掺铟比较,可以使M~*增加约10~4倍;在8～14微米波段与掺镓比较,可以使M~*增加大约10倍。
Infrared (thermal) imaging is an important area of application for charge-coupled devices because charge-coupled devices offer the possibility of combining easily with a large number of detectors and therefore eliminate or reduce mechanical scanning. In this regard, extrinsic silicon infrared detectors have special significance. The theory of this paper calculates the performance of extrinsic silicon detectors as a function of cut-off wavelength, that is, as a function of dopant ionization energy. It is found that the work has an optimum ionization energy in the 3-5 micron or 8-14 micron band, which is equivalent to the cut-off wavelength and tends to the short-wave end. At 77K, the best cut-off wavelength is about 3.6 microns (0.34 eV) for the 3-5 micron band and about 10 microns (0.12 eV) for the 8-14 micron band. The results show that M ~ * can be increased by about 10 ~ 4 times in the range of 3-5 μm when doped with the impurity with the best cutoff wavelength under the same conditions than other conditions. In the band of 8 ~ 14 μm, Compared with gallium, can make M ~ * increase about 10 times.