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在制作ＧａＡｓ负亲和势光电阴极中。ＧａＡｓ表面碳的沾污往往严重地降低其光电产额。为了去 除ＧａＡｓ表面碳的污染，我们用Ａｕｇｅｒ电子能谱仪对采用不同化学腐蚀处理的ＧａＡｓ表面进行分析 研究，证明在ＧａＡｓ表面有意形成一氧化膜并装进超高真空系统中加热到－５８０℃，对去除ＧａＡｓ 表面碳污染非常有效。
In the production of GaAs negative affinity photocathode. Contamination of the surface carbon of GaAs tends to severely reduce its photovoltaic yield. In order to remove the carbon contamination on the surface of GaAs, Auger electron spectroscopy was used to analyze the surface of GaAs with different chemical etching. It was proved that the surface of GaAs was intentionally formed an oxide film and charged into ultra-high vacuum system and heated to -580 ℃ , Is very effective in removing carbon contamination on the surface of GaAs.