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Ga N的带宽大约为 3.44e V,它可用于制作 LED;蓝、绿光谱的激光二极管 ;异质结器件以及高温器件。Lawrence Berkeley国家实验室的研究者们开发出了一些新的生长高质量 Ga N及其它 族氮化物的工艺技术。其中的一种方法使用金属镓作为缓冲层 ,在晶格不匹配的衬底上生长 Ga N薄膜
The Ga N has a bandwidth of about 3.44eV, which can be used to make LEDs; blue and green laser diodes; heterojunction devices and high temperature devices. Researchers at Lawrence Berkeley National Laboratory have developed several new techniques for growing high-quality Ga N and other family nitrides. One such method uses a metal gallium as a buffer layer to grow a GaN thin film on a lattice-mismatched substrate