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本文报道了采用化学气相沉积法制备红外ZnS体块晶体的工艺及其性能。并用傅立叶红外光谱仪测试了材料的红外性能 ,研究了晶体缺陷对材料红外透过率的影响。结果表明 :通过优化生长工艺 ,使反应室的压力在 5 0 0～ 10 0 0Pa之间变化 ,沉积温度控制在 5 5 0～ 6 5 0℃之间 ,可以制备出厚度均匀 ,红外透过率 (3- 5 μm和 8～ 12 μm)在70 %以上 ,尺寸达 2 5 0mm× 2 5 0mm× 15mm高质量的ZnS体块晶体。
This paper reports the preparation and properties of infrared ZnS bulk crystals by chemical vapor deposition. The infrared performance of the material was tested by Fourier transform infrared spectroscopy. The influence of crystal defects on the infrared transmittance of the material was studied. The results show that the pressure in the reaction chamber can be varied from 5 0 0 to 100 0 Pa by optimizing the growth process and the deposition temperature can be controlled between 550 and 650 ℃. The uniform thickness and the infrared transmittance (3 - 5 μm and 8 ~ 12 μm) in more than 70%, the size of up to 250mm × 250mm × 15mm high quality ZnS bulk crystal.