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熔性/亚熔性激光退火在IGBT类电力电子器件制造中有着重要的作用。该工艺涉及瞬间、局部、高强度的能量馈入冲击,材料在升温段涉及固态至亚熔或局部熔化状态的相变,在随后降温段的退火,还有离子注入杂质在此短暂过程中的激活和扩散再分布等复杂的物理过程。为了从机理上比较好地处理和揭示这样的工艺步骤,在大量激光退火实验的基础上,进行了工艺过程的全数值分析。首先,利用瞬态热场分析技术计算出激光作用下的硅材料浅表层中,不同时刻和不同位置处沿硅晶圆深度方向各点的温度-时间变化曲线,之后将菲克第二定律推广到方程式中相关量为时变的情况,利用数值积分计算出最终的杂质再扩散量,并与实验结果相比较验证。该工作初步建立起了熔性/亚熔性激光退火工艺步骤的可量化的物理模型。
Fusion / sub-fusion laser annealing plays an important role in the manufacture of IGBT power electronics. The process involves instantaneous, local, high-energy feed-in impingement, a material phase change from solid to sub-melted or locally melted during the heating phase, annealing during the subsequent cooling down phase, and ion-implanted impurities during this transient process Activation and diffusion redistribution and other complex physical processes. In order to handle and reveal such process steps relatively well from the mechanism, a full numerical analysis of the process was carried out on the basis of a large number of laser annealing experiments. First, the temperature-time curve of each point along the silicon wafer at different time and location in the superficial layer of silicon under the action of laser is calculated by transient thermal field analysis. Then, the second law of Fick To the equation of the time-dependent changes in the amount of the use of numerical integration to calculate the final re-diffusion of impurities, and compared with the experimental results verify. This work initially established a quantifiable physical model of the fusion / sub-fusion laser annealing process step.