论文部分内容阅读
采用基于密度泛函理论的第一性原理平面波赝势法计算了InP/InGaAs转移电子光阴极吸收层材料的电学结构和光学性质,交换关联能采用杂化泛函HSE06来描述。首先对闪锌矿结构GaAs材料能带图进行计算验证,接着建立标准InGaAs材料体结构模型,并对模型进行了动力学的自洽优化,在优化后的基础上进行了非自洽的计算,得到标准InGaAs材料的复介电函数,然后根据KramersKronig关系推出标准InGaAs材料光吸收系数。最后,结合转移电子光阴极量子效率模型,在给定P型标准InGaAs材料非平衡少子扩散长度分别是0.8、1.0、1.2、1.4、1.6和2.0mm的条件下,得到对能量在0.780260~0.820273eV区间内、间距为0.002eV的不同光子能量优化的InP/InGaAs转移电子光阴极吸收层厚度。
The electrical structure and optical properties of the InP / InGaAs electron-absorbing material were calculated by the first-principle plane-wave pseudopotential method based on the density functional theory. The exchange correlation can be described by the hybrid function HSE06. Firstly, the energy band diagram of GaAs material of sphalerite structure is calculated and verified. Then, a standard InGaAs material bulk structure model is established, and the dynamics of the model is optimized by self-consistent. Based on the optimization, Get the complex dielectric function of the standard InGaAs material, and then introduce the standard optical absorption coefficient of the InGaAs material according to the KramersKronig relationship. Finally, with the transfer electron photon quantum efficiency model, given the diffusion length of the unbalanced minority carrier of the P-type standard InGaAs materials are 0.8,1.0,1.2,1.4,1.6 and 2.0mm, respectively, the energy at 0.780260 ~ 0.820273eV InP / InGaAs electron-photodiode absorber layer thickness optimized with different photon energies at 0.002eV in the interval.