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研究了硫化镉(CdS)晶片Cd面的化学机械抛光(CMP)工艺。采用硅溶胶抛光液和NaClO氧化剂,分别使用聚氨脂和磨砂革抛光垫进行粗抛和精抛实验,并研究了氧化剂掺入量、抛光转速、抛光压力等工艺条件对CdS晶片表面质量的影响。结果表明,在抛光液中氧化剂体积分数为6%左右、抛光盘的转速为90～100 r/min、压强为55～60 g/cm2条件下可得到平整度较好、表面缺陷低、表面粗糙度低的高质量抛光表面。金相显微镜和微分干涉显微镜下观测抛光片表面无划痕、无桔皮产生,原子力显微镜测试得到抛光后CdS晶片Cd面的表面粗糙度值仅为0.385 nm。
The chemical mechanical polishing (CMP) process of Cd surface of CdS wafers was studied. Silica sol and NaClO oxidant were used in the experiments. Polyester and matte polishing pads were used for rough polishing and fine polishing respectively. The effects of oxidant dosage, polishing speed and polishing pressure on the surface quality of CdS wafers were studied. . The results show that when the volume fraction of oxidant in the polishing solution is about 6%, the rotating speed of the polishing disc is 90-100 r / min and the pressure is 55-60 g / cm2, the flatness is good, the surface defect is low, the surface roughness Low-quality high-quality polished surface. Under the microscope and differential interference microscope, no scratches were found on the polished surface and no orange peel was produced. The surface roughness of the Cd surface of the CdS wafers polished by AFM was only 0.385 nm.