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本文用单一能级界面态模型和均匀连续分布界面态模型研究了MOS电容微分量((de)/dv)与频率ω的关系,得到了归一化的(1-e/c_i)~3d/dV(e/ci)-V及(1-e/c_i)~(-3)d/dV(e/c_i)-ω解析式;用非均匀分布模型研究了界面电荷随机涨落的影响,并且,数字计算了相应的曲线.(1-e/c_i)~(-3)d/dV(e/c_i)-ω曲线是具有峰值的谱线,其峰值、峰位分别与界面态密度及发射时间常数相关.此谱线的峰值、峰位与 MOS栅压的关系对应界面态密度及发射时间常数的能量分布.这种方法与电导技术类似,具有可以同时得到态密度及俘获截面数据的优点.实验结果与理论计算结果相符合.
In this paper, we study the relationship between the micro-capacitance (de / dv) of MOS capacitor and the frequency ω using the single-level interface state model and the uniform continuous distribution interface state model. The normalized (1-e / c_i) ~ 3d / dV (e / ci) -V and (1-e / c_i) ~ (-3) d / dV (e / c_i) -ω analytic formula; using the non-uniform distribution model to study the impact of random fluctuations of the interface charge, and (1-e / c_i) ~ (-3) d / dV (e / c_i) -ω curve is the spectral line with peak value, the peak and peak positions are related to the interface state density and emission The relationship between the peak value and the peak voltage and the gate voltage of MOS corresponds to the energy distribution of the interface state density and the emission time constant.This method is similar to the conductance technique and has the advantage of obtaining the state density and the capture cross section data simultaneously The experimental results are consistent with the theoretical calculation results.