论文部分内容阅读
A high-order curvature-compensated and high power-supply rejection ratio (PSRR) BiCMOS bandgap reference is presented.The circuit utilizes positive temperature characteristics of the saturation current ISS and forward current gainβof the bipolar transistors to realize a low temperature coefficient (TC) as well as filter capacitors and level-shift structures to improve the PSRR.Implemented in 0.6μm BCD process,the proposed voltage reference consumes a supply current of 28μA at 3.6 V.A temperature coefficient of 2.8 ppm/℃,PSRR of more than 80 dB at low frequencies and a line regulation of 50 ppm/V from 3.6 to 5.5 V are easily achieved,which make it widely applicable in portable equipment.
A high-order curvature-compensated and high power-supply rejection ratio (PSRR) BiCMOS bandgap reference is presented. The circuit utilizes positive temperature characteristics of the saturation current ISS and forward current gain β of the bipolar transistors to realize a low temperature coefficient (TC) the proposed voltage reference consumes a supply current of 28 μA at 3.6 VA temperature coefficient of 2.8 ppm / ° C., the PSRR of more than 80 dB at low frequencies and a line regulation of 50 ppm / V from 3.6 to 5.5 V are easily achieved, which make it widely available in portable equipment.