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研究提高非制冷型铟砷锑(InAsSb)光子探测器在8~9μm波长的灵敏度。用熔体外延(ME)技术在砷化铟(InAs)衬底上生长了长波长InAsSb厚外延膜,外延层厚达到50μm。X-射线衍射(XRD)谱测量表明,外延层为高质量单晶。电子探针微分析(EPMA)组份分布图像显示,Sb在外延层中的分布比较均匀。用该材料制作了光导探测器,在探测器上安装了锗(Ge)浸没透镜。非制冷条件下,器件的光谱响应证明,InAs0.06Sb0.94探测器在波长8.0μm及9.0μm处的探测率D*分别为1.30×109 cm·Hz1/2·W-1及0.28×109 cm·Hz1/2·W-1,比InAs0.02Sb0.98探测器提高了1个数量级,这是由于InAs0.06Sb0.94材料中As组份的增加引起的。而在波长6.5μm处,InAs0.06Sb0.94和InAs0.02Sb0.98的峰值探测率D*λp均达大于1.00×109 cm·Hz1/2·W-1,可应用在红外探测和成像领域。
Research to improve the uncooled indium arsenic antimony (InAsSb) photon detector at 8 ~ 9μm wavelength sensitivity. Long-wavelength InAsSb thick epitaxial films were grown on indium arsenide (InAs) substrates by melt epitaxy (ME), and the epitaxial layer thickness was up to 50μm. X-ray diffraction (XRD) measurements show that the epitaxial layer is a high quality single crystal. Electron probe microanalysis (EPMA) component distribution images show that the distribution of Sb in the epitaxial layer is relatively uniform. A photoconductive detector was fabricated from this material and a germanium (Ge) immersion lens was mounted on the detector. The spectral response of the device under uncooled conditions shows that the detection rates D * of the InAs0.06Sb0.94 detector at the wavelength of 8.0 μm and 9.0 μm are 1.30 × 109 cm · Hz1 / 2 · W-1 and 0.28 × 109 cm · Hz1 / 2 · W-1, an order of magnitude more than the InAs0.02Sb0.98 detector, due to the increase in As content in the InAs0.06Sb0.94 material. At the wavelength of 6.5μm, the peak detection rates of InAs0.06Sb0.94 and InAs0.02Sb0.98 are both higher than 1.00 × 109 cm · Hz1 / 2 · W-1 and can be used in the field of infrared detection and imaging.