一、前言用作太阳能光电转换的非晶态硅薄膜半导体材料必须是含有适量氢的低缺陷态密度的材料。材料的性能,如电学性能、光学性能、稳定性等都与其中的氢有关。在不同工艺条件下制备的材料,不但含氢量可能不同,而且氢的存在状态也可能不同。因此,在材料的制备和性能研究中很希望了解氢的含量及其存在状态。 I. INTRODUCTION Amorphous silicon thin film semiconductor materials used for solar photovoltaic conversion must be low defect state density materials containing a suitable amount of hydrogen. Material properties, such as electrical properties, optical properties, stability and so on are related to the hydrogen. Materials prepared under different process conditions not only have different amounts of hydrogen, but also have different states of hydrogen present. Therefore, in the preparation of materials and properties of the study is very much hope that the content of hydrogen and its existence.