在离子注入材料改性的研究过程中(金属、绝缘材料和光学材料等),在许多场合下,要求注入的元素(如Fe中注入N、Y、Ph和Sn等)在靶子中占百分之几的含量,这就要求注入剂量高达10~(17)/cm~2到10~(12)/cm~2。由于离子注入的溅射效应在低能和大剂量注入中是相当明显的,因此,对这些元素高剂量注入后的杂质分布、溅射系数、溅射厚度和靶子中杂质的收集量做一分析是十分重要的。 In the research on the modification of ion implantation materials (metals, insulating materials and optical materials, etc.), on many occasions, it is required that the injected elements (such as N, Y, Ph and Sn injected into Fe) This requires the injection of dose up to 10 ~ (17) / cm ~ 2 to 10 ~ (12) / cm ~ 2. Since the sputtering effect of ion implantation is quite noticeable in low-energy and high-dose implants, an analysis of the impurity distribution, the sputtering coefficient, the sputtering thickness and the amount of impurities collected in the target after the high-dose implantation of these elements is made Very important.