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用卤素钨灯作辐射热源快速热氮化 (RTN) 10 nm Si O2 膜 ,制备了〈10 0〉和〈111〉晶向 Si衬底上的 Si- Si Ox Ny-Al电容结构 .研究了电子从〈10 0〉和〈111〉不同晶向 N型硅积累层到 RTN后 Si O2 膜 (或原始 Si O2 膜 )的漏电流和高场 F- N隧穿电流 .研究结果表明 :经 RTN Si O2 膜比原始 Si O2 膜从低场到隧穿电场范围都明显地看到电导增强现象 .比较 RTN后两种不同晶向样品 ,低场漏电流没有多大的差别而在高场从〈10 0〉晶向比从〈111〉晶向 Si隧穿Si Ox Ny 膜的 F- N电流却明显增加 ,借用一种基于横向晶格动量守恒的理论模型解释了这种现象
The Si-Si Ox Ny-Al capacitor structure of <10 0> and <111> to Si substrates was prepared by using a halogen tungsten lamp as a rapid thermal nitridation (RTN) 10 nm Si O2 film. The leakage current and high-field F-N tunneling current from SiN film with different crystalline orientation to SiN film (or original Si O2 film) from <10 0> and <111> The results show that the conductance enhancement phenomenon is obviously observed in the O2 film from the low field to the tunneling electric field compared with the original Si O2 film.Compared with the samples of two different crystal orientations after RTN, the low field leakage current is not much different from high field at <10 0 > F-N current of Si Oxide Si tunneling significantly increases from <111> to Si, and this phenomenon is explained by a theoretical model based on conservation of transverse lattice momentum