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利用金属有机化学气相沉积(MOCVD)技术,采用一种称为低温钝化的新生长方法成功地生长出多层InGaN/GaN量子点。这种方法是对GaN表面进行钝化并在低温下生长,从而增加表面吸附原子的迁移势垒。采用原子力显微镜清楚地观察到该方法生长的样品中岛状的量子点。从量子点样品的I-V特性曲线观察到了共振隧穿引起的负阻效应,其中的锯齿状峰形归因于零维量子点的共振隧穿。
Multi-layer InGaN / GaN quantum dots have been successfully grown using a new growth technique known as low temperature passivation using metalorganic chemical vapor deposition (MOCVD). In this method, the GaN surface is passivated and grown at low temperature, thereby increasing the migration barrier of adsorbed atoms on the surface. The island-shaped quantum dots in the sample grown by this method were clearly observed using an atomic force microscope. The negative resistance effect caused by resonant tunneling is observed from the I-V characteristic curve of the QDs. The jagged peak shape is attributed to the resonant tunneling of zero-dimensional quantum dots.