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利用磁控溅射方法在Si(111)衬底上制备了具有(111)和(222)择优取向的TiN薄膜.用纳米压痕和纳米划痕方法研究了该薄膜的变形和断裂行为.用扫描电子显微镜、纳米压痕原位原子力显微镜及原位光学显微镜并结合加-卸载曲线及划痕曲线获得了薄膜发生变形和断裂的微观信息.在压痕试验中,TiN薄膜在压入深度为200nm时表现为塑性变形及压痕周围的局部断裂,随着压入深度的增大,塑性变形和局部断裂变得越显著,当最大压入深度达到临界值1000nm时,薄膜和衬底间发生了界面断裂.在划痕实验中,100mN及200mN的最大载荷均可以引起界面断裂.最大为200mN的载荷使得薄膜发生界面断裂的位置比用100mN载荷时的位置提前,但其临界断裂载荷和100mN时及压痕实验时的临界界面断裂载荷基本相同.
TiN thin films with (111) and (222) preferential orientation were prepared on Si (111) substrate by magnetron sputtering method.The deformation and fracture behavior of the films were investigated by nanoindentation and nano-scratch Scanning electron microscopy, in situ atomic force microscopy with nanoindentation and in situ optical microscopy combined with the addition-unloading curve and scratch curve obtained micro-deformation and fracture of the microscopic information.In the indentation test, TiN film at a depth of indentation At 200nm, the plastic deformation and the local rupture around the indentation show the more obvious plastic deformation and local fracture with the increase of the indentation depth. When the maximum indentation depth reaches the critical value of 1000nm, the film and the substrate occur In the scratch test, the maximum load of 100mN and 200mN can cause the interface fracture.The maximum load of 200mN makes the position of the film interface rupture ahead of the 100mN load, but its critical rupture load and 100mN The critical interface fracture load at the time of indentation test is basically the same.