相比于传统的Si IGBT功率器件而言,碳化硅MOSFET可达到更高的开关频率、更高的工作温度以及更低的功率损耗。然而,快速的暂态过程使开关性能对回路的寄生参数更加敏感。因此,为了评估寄生电感对碳化硅MOSFET开关性能的影响,基于回路电感的概念,将栅极回路寄生电感、功率回路寄生电感以及共源极寄生电感等效成3个集总电感,并且从关断过电压、开通过电流及开关损耗等3个方面,对这3个电感对Si C MOSFET开关性能的影响进行了系统的对比研究。研究表明:共源极寄生电感对开关的影响最大,功率回路寄生电感次之,而栅极回路寄生电感影响最小。最后,基于实验分析结果,为高速开关电路的布局提出了一些值得借鉴的意见。 Silicon carbide MOSFETs achieve higher switching frequencies, higher operating temperatures and lower power losses than traditional Si IGBT power devices. However, fast transient behavior makes switching performance more sensitive to parasitic parameters of the loop. Therefore, in order to evaluate the influence of parasitic inductance on the switching performance of silicon carbide MOSFET, based on the concept of loop inductance, the gate loop parasitic inductance, the power loop parasitic inductance and the common source parasitic inductance are equivalent to three lumped inductances, Off voltage, open current and switching losses in three aspects, the three inductors of Si C MOSFET switching performance of a systematic comparative study. The results show that the common source parasitic inductance has the most influence on the switch, the power loop parasitic inductance is the second, and the gate loop parasitic inductance has the least effect. Finally, based on the experimental results, some valuable suggestions for the layout of high-speed switch circuits are put forward.