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由于等效电阻谐振条件限制,传统的单层电路模拟吸波体(CA)结构在低频段不能形成多个谐振点.为了突破这个限制,本文提出了一种金属线阵列嵌入的单层CA结构.该结构在低频段形成了双谐振峰吸收,拓展了吸波频带.采用准静态模型,分析金属线阵列嵌入的单层CA结构内的电磁波的散射.分析结果表明,金属线阵列的嵌入使结构的介质层在低频激发等离子体谐振.在该谐振频率点,结构形成额外吸收峰,该吸收峰和单层CA结构原有的吸收峰一起实现了双峰吸收.实验和FDTD数值计算结果相符合,结果表明该结构在不增加厚度的前提下,扩展了低频段的吸波频段.
Due to the limitation of the equivalent resistance resonance, the conventional single-layer analog absorber (CA) structure can not form multiple resonance points in the low frequency band.In order to overcome this limitation, a single-layer CA structure . The structure forms dual resonant peak absorption in the low frequency band and expands the absorption band.The quasi-static model is used to analyze the scattering of the electromagnetic wave in the single-layer CA structure embedded in the metal wire array.The analysis results show that the metal wire array embedding The dielectric layer of the structure excites plasma resonance at low frequency, at which point the structure forms an additional absorption peak that achieves a bimodic absorption together with the original absorption peak of the single-layer CA structure. Experimental and FDTD Numerical Results Phase The result shows that this structure expands the absorption band of low frequency band without increasing the thickness.