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对ｎ型电子有效质量各向异性半导体量子阱，给出了子带间正入射吸收的振子强度解析表达式．这种子带间的跃迁有束缚基态到束缚的激发态的，有束缚基态到扩展的激发态的．以ＡｌＡｓ／ＧａＡｌＡｓ为例研究了量子阱生长方向、阱宽对量子阱吸收波长和振子强度的影响
For n-type electron effective mass anisotropic semiconductor quantum wells, the analytic expression of the oscillator strength at normal incident absorption between subbands is given. The transition between these subbands has a bound ground state to a bound excited state, a bound ground state to an extended excited state. Taking AlAs / GaAlAs as an example, the effects of quantum well growth direction and well width on the absorption wavelength and oscillator strength of quantum well