论文部分内容阅读
成功研制出蓝宝石衬底的槽栅增强型AlGaN/GaN HEMT.栅长1.2μm,源漏间距4μm,槽深15nm的器件在3V栅压下饱和电流达到332mA/mm,最大跨导为221mS/mm,阈值电压为0.57V,ft和fmax分别为5.2和9.3GHz.比较刻蚀前后的肖特基I-V特性,证实了槽栅刻蚀过程中非有意淀积介质层的存在.深入研究了增强型器件亚阈特性和频率特性.
A sapphire substrate with trench-enhanced AlGaN / GaN HEMTs was successfully fabricated with a gate current of 1.2μm, a source-drain distance of 4μm and a slot depth of 15nm with a saturation current of 332mA / mm at 3V gate voltage and a maximum transconductance of 221mS / mm , The threshold voltage of 0.57V, ft and fmax were 5.2 and 9.3GHz respectively.Comparing the Schottky IV characteristics before and after etching, confirmed the presence of the dielectric layer is not intentionally deposited during trench gate etching depth study of the enhanced Device subthreshold characteristics and frequency characteristics.