论文部分内容阅读
采用电泳沉积法在Si(111)衬底上制备GaN薄膜,并研究退火温度对GaN薄膜晶体质量、表面形貌和发光特性的影响。傅立叶红外吸收谱(FTIR)、X射线衍射(XRD)和扫描电镜(SEM)的测试结果表明所得样品为六方纤锌矿结构的GaN多晶薄膜,随退火温度的升高,晶粒尺寸增大,结晶化程度提高。室温下光致发光谱的测试发现了位于367 nm处的强发光峰和437 nm处的弱发光峰,其发光强度随退火温度的升高而增强,但发光峰的位置并不发生移动。
GaN films were prepared on Si (111) substrates by electrophoretic deposition and the effect of annealing temperature on the crystal quality, surface morphology and luminescence properties of GaN thin films was investigated. The results of Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the obtained sample is a hexagonal wurtzite GaN polycrystalline thin film. As the annealing temperature increases, the grain size increases , The degree of crystallization increases. The results of the photoluminescence at room temperature showed that there was a strong luminescence peak at 367 nm and a weak luminescence peak at 437 nm. The luminescence intensity increased with the increase of annealing temperature, but the luminescence peak did not move.