Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is tar from ideal.In this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector barrier.Fairly monoenergetic electrons traverse through the ultrathin AlcOa dielectric via tunneling,which are accelerated and shifted to the collector region.The devices exhibit a high current on-off ratio of ＞ 105 and a high current density (Jc) of ～ 1,000 A/ore2 at the same time.Notably,this work demonstrates a common-emitter current gain (β) value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron transistors.Furthermore,the temperature dependent performance is investigated,and the β value of 1,613 is obtained at 150 K.Therefore,this work presents the potential of 2D based transistors for high-performance applications.