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为了准确地表述碲镉汞(Hg1-xCdxTe)的电学性能,对碲镉汞(Hg1-xCdxTe)样品进行了霍耳效应测试,讨论了伴随霍耳电压所产生的几种副效应电压的特性及其消除方法,研究了第5种电压在不同组分x碲镉汞样品上的体现。在高阻样品上拟合出第5种电压随测试电流变化曲线。分析了第5种电压和碲镉汞材料晶体质量之间的关系。
In order to accurately describe the electrical properties of Hg1-xCdxTe, the Hall effect test was carried out on the Hg1-xCdxTe samples. The characteristics of several side-effect voltages accompanied by the Hall voltage were discussed. The elimination method, the fifth kind of voltage in the different components of mercury cadmium telluride samples reflect. In the high-impedance samples fitted with the fifth voltage with the test current curve. The relationship between the fifth voltage and the crystal quality of HgCdTe material was analyzed.