结合Williamson-Hall plot方法和线型分析方法的优点,提出了一种有效分离有限晶粒尺寸和非均匀应力等X射线衍射展宽效应的方法,可以用于GaN外延层厚度等参数的快速精确测量.用该方法对一系列在蓝宝石衬底上生长的厚度在0.7—4.2μm的GaN外延膜进行了测量,并与椭圆偏振光谱法测量结果进行了比较,结果表明其差别<4%,反应了这种方法的准确性. Combining with the advantages of Williamson-Hall plot and linear analysis, a method of effectively separating X-ray diffraction broadening effects such as finite grain size and non-uniform stress is proposed, which can be used for the rapid and accurate measurement of parameters such as GaN epitaxial layer thickness A series of GaN epitaxial films with a thickness of 0.7-4.2μm were grown on sapphire substrate by this method and compared with the results of ellipsometry.The results showed that the difference was less than 4% The accuracy of this method.