随着大规模集成电路(LSI)的高密度化,图形微细化,进一步对尺寸、曝光精度有更严格的要求,所以从光刻掩模到光致抗蚀剂剥离技术这一系列的光刻工艺过程(装置的选择、安装、维护,材料药品的选择、使用方法,工艺最佳条件的掌握,环境)全都要求提高到同一水平。就一般情况而言,形成所希望的图形是越来越困难了。仅就抗蚀剂的选择和使用技术来说,并不构成形成微细图形的必要条件,这里仅就抗蚀剂加以说明。由负性抗蚀剂制作微细图形 1.负性抗蚀剂的特长抗蚀剂分为负性和正性,无论哪种,分辨率都超过现在的光学系统。但两者在特性 With the increasing density of LSIs and the miniaturization of graphics, there are more stringent requirements on the size and the exposure accuracy. Therefore, a series of photolithography technologies from photolithographic masking to photoresist strip technology The process (selection of equipment, installation, maintenance, selection of materials and medicines, methods of use, mastery of optimum process conditions, environment) are all required to be elevated to the same level. As a general rule, it is becoming more and more difficult to form the desired graphics. Only the resist selection and use technique does not constitute a necessary condition for forming a fine pattern, and only the resist will be described here. Fine pattern made of negative resist 1. Features of negative resist Resists are divided into negative and positive, no matter what, resolution than the current optical system. But both are in character