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应用Cheng-Born能带对称破缺理论和TFDC(Thomas-Fermi-Dirac-Cheng)电子理论研究了薄膜层内电子的特性。对金属铂上的TiO2膜层来说,TFDC理论指出电子(或空穴)将由金属与膜的间界面一侧迁移到另一侧。根据Cheng-Born对称破缺理论,当能带中只有很少的电子时,则只有极少的角区中存在电子,动量空间即产生对称破缺,从而导致超导电性,并由热力学估算出薄膜超导体的转变温度。结果显示薄膜超导体的转变温度至少比块材超导体的转变温度高一个量级。作者还设计了一个研究薄膜超导电性的实验。
The electron properties in the thin film were studied using the Cheng-Born band symmetry breaking theory and the electron theory of TFDC (Thomas-Fermi-Dirac-Cheng). For a TiO2 film on metal platinum, TFDC theory states that electrons (or holes) will migrate from one side of the interface between the metal and the film to the other. According to Cheng-Born Symmetry Breaking Theory, when there are only a few electrons in the energy band, there are only a few angular regions in which electrons are present. The momentum space is symmetrically broken, resulting in superconductivity and thermodynamic estimation Thin film superconductor transition temperature. The results show that the transition temperature of the thin film superconductor is at least one order of magnitude higher than the transition temperature of the bulk superconductor. The authors also designed an experiment to study the superconductivity of thin films.