浅论油松、侧柏容器育苗及抗旱造林技术

来源 :农家参谋 | 被引量 : 0次 | 上传用户:jyzhenghb
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
为解决工程造林成活率低的问题,我区从2001年开始容器育苗造林,随着天保工程的实施,容器育苗造林已成为全区匹配工程造林主要方式之一,年均推广200万袋,不仅有效解决了工程造林用苗问题,而且也极大提高了造林成活率。文章通过近几年的试验,总结提出了油松、侧柏容器育苗和抗旱造林的技术,可以在今后的造林中广泛应用。 In order to solve the problem of low survival rate of afforestation projects, the container seedling afforestation started in 2001 in our district. With the implementation of the Natural Forest Protection Project, container nursery and afforestation has become one of the main ways of matching afforestation in the whole region with an annual average of 2 million bags. Effective solution to the project afforestation seedlings problems, but also greatly improved the survival rate of afforestation. Through experiments in recent years, the article summarizes the technology of Pinus tabulaeformis and Platycladus orientalis container seedling and drought afforestation, which can be widely used in afforestation in the future.
其他文献
人常说,草木无情,当草木染上了疾病、遭受虫害,植物的痛楚却难以言说,与植物感同身受的还有紧张的植物保护技术人员。近年来,有害生物绿色防控技术的快速发展,正逢传统防治方
Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates.The oscillator circuit consists of seven delay stag
Direct-current transfer characteristics of(In GaN)/AlGaN/AlN/GaN hetcrojunction field effect transistors(HFETs)are presented.A drain current plateau(Ids = 32.0
The capacitance-voltage characteristics of AlGaN/GaN high-electron-mobility transistors(HEMTS)are measured in the temperature range of 223-398 K.The dependence
InAs_(1-x)Sb_x with different compositions is grown by molecular beam epitaxy on(lOO)-oriented semi-insulating GaAs substrates.The increase of Sb content in the
We report, for the first time to our knowledge, an on-chip mode-locked laser diode(OCMLLD) that employs multimode interference reflectors to eliminate the need
We numerically investigate a coupled-resonator structure consisting of a stub resonator and a nanodisk resonator using a two-dimensional finite element method.S
全国科技人员永远不会忘记邓小平同志对科技事业的关怀和支持。中国科学院半导体研究所的广大职工也将永远不会忘怀他老人家对我们的关怀和支持。那是十年内乱尚未结束的年代
The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors(OTFTs) is studied.The effects of electrode thi
We investigate the influence of interface charge on electrical performance of NbAlO/AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors(MOSHEM