Carbon is deposited on C and Si substrates by rf magnetron plasma sputtering in a D2 atmosphere.The deposited layers are examined with ion beam analysis and thermal desorption spectroscopy (TDS).The growth rates of the layers deposited on Si decrease with increasing substrate temperature,while increase significantly with the increase of D2 pressure.Meanwhile,the deuterium concentrations in the layers deposited on the Si substrates decrease from 30％ to 2％ and from 31％ to 1％ on the C substrates,respectively,when the substrate temperature varies from 350K to 900K.Similarly,the D concentration in the layer on the Si substrates increases from 3.4％to 47％,and from 8％ to 35％ on the C substrates when the D2 pressure increases from 0.3 Pa to 8.0 Pa.D desorption characterized by TDS is mainly in the forms of D2,HD,HDO,CD4,and C2D4,and a similar release peak occurs at 645K.The release peak of D2 molecules at 960K can be attributed to the escaped gas from the thin co-deposited deuterium-rich carbon layer in the form of C-D bonding.