论文部分内容阅读
利用低压金属有机化学气相沉积(LP-MOCVD)生长了无铝980 nm InGaAs/InGaAsP/InGaP单量子阱(SQW)激光器,测试了含铝的InGaAs/GaAs/AlGaAs和无铝的InGaAs/InGaAsP/InGaP两种不同材料的980 nmInGaAs SQW激光器在30～70℃范围内的P-I-V特性曲线,对比分析了两种材料系980 nm激光器输出光功率、阈值电流、斜率效率和激射波长随温度的变化,并对InGaAs/InGaAsP/InGaP激光器进行了可靠性实验。
An aluminum-free 980 nm InGaAs / InGaAsP / InGaP single quantum well (SQW) laser was grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and tested on aluminum-containing InGaAs / GaAs / AlGaAs and Al-free InGaAs / InGaAsP / InGaP The PIV characteristics of 980 nm InGaAs SQW lasers with different materials in the range of 30-70 ℃ were compared and analyzed. The output power, threshold current, slope efficiency and lasing wavelength of the two materials were compared with those of the 980 nm lasers. Reliability experiments on InGaAs / InGaAsP / InGaP lasers were carried out.