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采用液态的砷硅玻璃膜作掺杂源进行高浓度、结深小于1微米的砷向硅中的扩散。报导了源浓度、源厚度和扩散气氛对扩散结果的影响。在1000℃下得到的电活性砷表面浓度为1.7×10~(20)/厘米~3。这大约相当于总砷浓度的60%。扩散的砷层处于准平衡状态,因此,其电活性砷的总量可用热处理来改变。当掺杂剂浓度从5×10~(19)/厘米~3上升到其最大值(约为2×20~(20)/厘米~3)时,则砷的扩散系数增加50倍。D 随电子浓度约成线性地增加。报导的结果与最近描述的模型是一致的,即在低温处理下,砷是通过带负电的空位和砷丛聚而扩散的。
Liquid arsenic-silicate glass film is used as doping source to diffuse arsenic into silicon with high concentration and junction depth less than 1 micron. The effects of source concentration, source thickness and diffusion atmosphere on diffusion results are reported. The surface area of electroactive arsenic obtained at 1000 ℃ is 1.7 × 10 ~ (20) / cm ~ 3. This corresponds to about 60% of the total arsenic concentration. The diffused arsenic layer is in a quasi-equilibrium state, so the total amount of electroactive arsenic can be changed by heat treatment. When the dopant concentration increases from 5 × 10-19 / cm3 to its maximum value (about 2 × 20-20 / cm3), the diffusion coefficient of arsenic increases by 50 times. D increases linearly with electron concentration. The reported results are consistent with the recently described model that arsenic diffuses through negatively charged vacancies and arsenic clusters at low temperatures.