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采用非同时读出条件下的两波耦合实验装置,以单束光入射Ce:KNSBN光折变晶体,研究了入射光强度和光入射角对Ce:KNSBN晶体中光扇效应的影响.研究发现,光扇效应存在明显的入射光强度阈值特性,入射光强度阈值为38.2mW/cm2;对应相同的入射光强度,光入射角θ为15°时稳态光扇强度Ifsat最强.研究了入射光调制对晶体中光扇噪声及体全息存储的影响,入射光调制抑制了光扇噪声对Ce:KNSBN晶体两波耦合及体全息存储的影响,使得再现图像质量得到了明显改善.
The effect of incident light intensity and angle of incidence on the optical fan effect in Ce: KNSBN crystal was studied by using single-beam incident Ce: KNSBN photorefractive crystal with two-wave coupling experimental device under non-simultaneous readout condition. The threshold value of incident light intensity is 38.2mW / cm2 for the light fan effect and the threshold value for the intensity of steady-state light fan Ifsat is the strongest when the incident angle θ is 15 ° for the same incident light intensity. The effects of incident light The effect of modulation on the optical fan noise and volume holographic storage in the crystal, the modulation of incident light suppresses the influence of optical fan noise on the two-wave coupling and volume holographic storage of Ce: KNSBN crystal, and the quality of the reproduced image is obviously improved.