目前，科技工作者采用各种技术、方法试图合成晶态氮化碳（β-C3N4）材料，并在不同工艺条件下对氮化碳材料生长及表征进行了大量的研究．但由于对氮化碳薄膜生长过程缺乏系统的了解，对这种材料的生长规律的认识受到了限制．本工作对XeCI准分子激光溅射C靶并辅以氮气放电在不 At present, scientists and technologists try to synthesize crystalline carbon nitride (β-C3N4) by various techniques and methods, and a great deal of research has been done on the growth and characterization of carbonitride under different technological conditions. However, due to the lack of systematic understanding of the growth process of carbonitride films, the understanding of the growth law of such materials has been limited. This work of XeCI excimer laser sputtering C target and supplemented with nitrogen discharge at