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采用Ti/Al/Ti/Au多层金属电极对高Al组分n-AlxGa1-xN(x=0.6)欧姆接触的制备进行了研究,通过优化Ti接触层厚度以及合金退火条件,获得了较低的比接触电阻率(5.67×10-5Ω.cm2)。研究证实,Ti接触层厚度对欧姆接触特性有着重要影响,同时发现,高低温两步退火方式之所以能够改善欧姆接触特性的本质是与Al3Ti及TiN各自的生成条件直接相关,即低温利于生成Al3Ti,高温利于生成TiN,而这对n型欧姆接触的有效形成至关重要。
The preparation of high-Al-component n-AlxGa1-xN (x = 0.6) ohmic contacts was studied by using Ti / Al / Ti / Au multilayer metal electrodes. By optimizing the thickness of the Ti contact layer and the annealing conditions of alloy, Than the contact resistivity (5.67 × 10-5Ω.cm2). The results show that the thickness of Ti contact layer has an important influence on the ohmic contact characteristics. It is also found that the nature of the high-low temperature two-step annealing method that can improve the ohmic contact properties is directly related to the respective formation conditions of Al3Ti and TiN. , High temperature conducive to the generation of TiN, which is essential for the effective formation of n-type ohmic contacts.