The spectral and polarity dependence of the quantum yield of charge carrier photo-generation was stud-ied by steady-state photocurrent measurement in a single layer PhPPV film, double layer film of PhPPV and R6G and doped film of PhPPV with R6G. The intrinsic and extrinsic charge carrier photogeneration was observed. The result indicates that the quantum efficiency of the double layer device is higher than that of single layer device under reverse bias, but it is opposite under forward bias. The yield of charge carrier photogeneration of the doped film is higher than that of the other two films at both forward and reverse bias because of the increased interface area between the electron donor and acceptor. The spectral and polarity dependence of the quantum yield of charge carrier photo-generation was stud-ied by steady-state photocurrent measurement in a single layer PhPPV film, double layer film of PhPPV and R6G and doped film of PhPPV with R6G. The intrinsic and The result indicates that the quantum efficiency of the double layer device is higher than that of single layer device under reverse bias, but it is opposite under forward bias. The yield of charge carrier photogeneration of the doped film is higher than that of the other two films at both forward and reverse bias because of the increased interface area between the electron donor and acceptor.