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本文通过对单晶硅、多晶硅力敏元件复合结构的对比分析,及优化多晶生长条件的选择探讨研制高稳定的多晶力敏元件的理论根据
In this paper, by comparing the composite structure of monocrystalline silicon and polycrystalline silicon force-sensitive element, and optimizing the selection of polycrystalline growth conditions, the theoretical basis for developing high-stability polycrystalline force-sensitive element