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本文利用光电容瞬态技术,在不同温度下,首次测得了N型掺锰(Mn)硅中与Mn相关的Mn施主能级Mn_i~(o/+)(Ec-0.416eV)的绝对电子光电离截面谱图.对实验点的理论拟合表明:电子光电离截面(σ_n~o)可用简单的、作了修正的Lucovsky公式来描述.该能级的空穴光电离截面(σ_p~o),在实验系统灵敏度范围内,未检测到讯号.这意味着σ_p~o的极大值也不大于10~(-21)cm~2.该中心的热激活能E_t和电子的光电离截面闽值能量E_(10)的很好一致,以及σ_n~o不依赖于温度的实验事实说明了电子通过该能级跃迁时,不存在着同晶格的强耦合作用.
In this paper, we first measured the Mn-related Mn donor Mn_i ~ (o / +) (Ec-0.416eV) absolute electron photoelectron in N-type Mn-doped silicon at different temperatures using photon capacitance transient technique The theoretical fitting of the experimental points shows that the electron photoionization cross-section (σ_n ~ o) can be described by a simple and modified Lucovsky formula.The hole photoionization cross section (σ_p ~ o) , No signal was detected within the sensitivity of the experimental system, which means that the maximum value of σ_p ~ o is not more than 10 ~ (-21) cm ~ 2. The thermal activation energy E_t of the center and the photoionization cross section The good agreement of E_ (10) and the fact that σ_n ~ o does not depend on the temperature indicate that there is no strong coupling effect of the same crystal lattice when electrons pass this energy level transition.