经过氢化处理的SiC.SiN和SiO等薄膜,作为新的光电子及保护层材料,它们中的H.C.N和Si的比份是影响其性质的主要因素。要弄清如离子注入、退火等各种处理过程中这些元素的输运机制,需要精确测定其成分及杂质的深度分布。离子束分析技术是解决此问题最有效的办法。由于卢瑟福背散射(RBS)不能测量H,人们通常用RBS测其它元素,再用α束弹性反冲法测H。两次存在截面 Hydrogenated SiC.SiN and SiO thin films, as a new optoelectronic and protective layer material, which H.C.N and Si ratio is the main factor affecting its properties. To understand such as ion implantation, annealing and other processing elements in the transport mechanism of these elements, the precise determination of the composition and impurity depth distribution. Ion beam analysis technology is the most effective way to solve this problem. Since Rutherford backscattering (RBS) can not measure H, one usually measures the other elements using RBS and then the alpha beam recoil method. There are two sections