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[学位论文] 作者：唐兆云,
来源：北京交通大学 年份：2006
以Ti3SiC2系导电陶瓷材料在高速列车受电弓滑板的应用为背景，对Mn+1AXn(其中，M是过渡金属元素，A是第三或第四主族元素，X是碳或氮，n=1，2，3)三元碳化物体系中的重要成员Ti3AlC2进行了......
[期刊论文] 作者：唐兆云,翟洪祥,周洋,艾明星,黄振莺,,
来源：北京交通大学学报 年份：2006
以Ti、Si和石墨粉为原料，以少量的灿为反应助荆，用反应热压（船）工艺在1450℃和25MPa下2h制得纯度为97％、相对密度为98．45％、粒度为5～10μm的Ti3SiC2多晶块体．其弯曲强度为407MPa、室温......
[期刊论文] 作者：冯帅,赵利川,张青竹,杨鹏鹏,唐兆云,吴次南,闫江,,
来源：Journal of Semiconductors 年份：2015
Extremely thin silicon on insulator p-channel metal-oxide-semiconductor field-effect transistors(PMOSFETs) with implanted doping and in situ doping are analyzed...
[期刊论文] 作者：冯帅,赵利川,张青竹,杨鹏鹏,唐兆云,闫江,吴次南,,
来源：Journal of Semiconductors 年份：2015
The effects of a carbon implant on thermal stability of Ni0:95(Pt0:05/Si films are investigated by implanting carbon of different doses into Si substrates befor...
Combining a multi deposition multi annealing technique with a scavenging(Ti) to improve the high-k/m
[期刊论文] 作者：张淑祥,杨红,唐波,唐兆云,徐烨峰,许静,闫江,,
来源：Journal of Semiconductors 年份：2014
ALD Hf O2 films fabricated by a novel multi deposition multi annealing(MDMA) technique are investigated, we have included samples both with and without a Ti sca...
[期刊论文] 作者：陶芬芬,杨红,唐波,唐兆云,徐烨锋,许静,王卿璞,闫江,,
来源：Journal of Semiconductors 年份：2014
The characteristics of TDDB(time-dependent dielectric breakdown) and SILC(stress-induced leakage current) for an ultra-thin SiO2/HfO2 gate dielectric stack are...
[期刊论文] 作者：陈广璐,唐波,唐兆云,李春龙,孟令款,贺晓彬,李俊峰,闫江,,
来源：微纳电子技术 年份：2013
成功开发出了一种可用于纳米结构及器件制作的电子束与光学光刻的混合光刻工艺。通过两步光刻工艺,在栅结构层上采用大小图形数据分离的方法,使用光学光刻形成大尺寸栅引出电...
Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trappi
[期刊论文] 作者：李新开,霍宗亮,靳磊,姜丹丹,洪培真,徐强,唐兆云,李春龙,叶甜春,,
来源：Journal of Semiconductors 年份：2015
This work presents a comprehensive analysis of 3D cylindrical junction-less charge trapping memory device performance regarding continuous scaling of the struct...
Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last pro
[期刊论文] 作者：任尚清,杨红,唐波,徐昊,罗维春,唐兆云,徐烨锋,许静,王大海,李俊峰,闫江,赵超,陈大鹏,叶甜春,王文武,,
来源：Journal of Semiconductors 年份：2015
Positive bias temperature instability(PBTI) characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically i...
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