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Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular B
[期刊论文] 作者：李联合,潘钟,张伟,林耀望,王学宇,吴荣汉,
来源：半导体学报 年份：2004
During the process of molecular beam epitaxy employing a DC plasma as N source,the effects of the growth temperature, growth rate and As4 pressure on the optica...
[期刊论文] 作者：李联合,潘钟,张伟,林耀望,王学宇,吴荣汉,,
来源：城市道桥与防洪 年份：2001
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular B
[期刊论文] 作者：李联合，潘钟，张伟，林耀望，王学宇，吴荣汉,
来源：城市道桥与防洪 年份：2000
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：李联合,潘钟,张伟,林耀望,王学宇,吴荣汉,
来源：半导体学报 年份：2001
研究了离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和 Ga In NAs/ Ga As量子阱的影响 .研究表明离子损伤是影响 Ga NAs和 Ga In NAs量子阱质量的关键因素 .去离子...
Effects of Growth Conditions on Optical Properties ofGa In NAs/Ga As Quantum Well Grown by Molecular
[期刊论文] 作者：李联合,潘钟,张伟,林耀望,王学宇,吴荣汉,
来源：半导体学报 年份：2000
During the process of molecular beam epitaxy employing a DC plasma as N source, the effects of the growth temperature, growth rate and As 4 pressure on the opt...
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