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[学位论文] 作者：杨靖治,,
来源： 年份：2014
随着当今通讯科技的飞速发展，以移动通信、雷达、卫星通信等为代表的无线通信系统对射频开关的开关速度、功率容量、开关损耗等各方面性能均提出了不断提高的新要求。在常用的......
Fabrication of a novel RF switch device with high performance using In_(0.4)Ga_(0.6)As MOSFET techno
[期刊论文] 作者：周佳辉, 常虎东, 张旭芳, 杨靖治, 刘桂明, 李海鸥, 刘洪,
来源：null 年份：2016
...
Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with
[期刊论文] 作者：马晓华,吕敏,庞磊,姜元祺,杨靖治,陈伟伟,刘新宇,,
来源：Chinese Physics B 年份：2014
The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV mea...
Fabrication of a novel RF switch device with high performance using In_(0.4)Ga_(0.6)As MOSFET techno
[期刊论文] 作者：周佳辉,常虎东,张旭芳,杨靖治,刘桂明,李海鸥,刘洪刚,,
来源：Journal of Semiconductors 年份：2016
A novel radio frequency(RF) switch device has been successfully fabricated using InGaAs metaloxide-semiconductor field-effect transistor(MOSFET) technology.The...
Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with
[期刊论文] 作者：马晓华, 吕敏, 庞磊, 姜元祺, 杨靖治, 陈伟伟, 刘新宇,
来源：null 年份：2014
...
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