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The effect of random dopant fluctuation on threshold voltage and drain current variation in junction
[期刊论文] 作者：Arash Rezapour,Pegah Rezapour,,
来源：Journal of Semiconductors 年份：2015
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-co...
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