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[期刊论文] 作者:Cheng-Ao Yang,Yu Zhang,Yong-Ping Liao,Jun-Liang Xing,Si-Hang Wei,Li-Chun Zhang,Ying-Qiang Xu, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Jin-Ming Shang,Jian Feng,Cheng-Ao Yang,Sheng-Wen Xie,Yi Zhang,Cun-Zhu Tong,Yu Zhang,Zhi-Chuan Niu, 来源:中国物理B(英文版) 年份:2019
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 μm in an exteal...
[期刊论文] 作者:Shu-Shan Huang,Yu Zhang,Yong-Ping Liao,Cheng-Ao Yang,Xiao-Li Chai,Ying-Qiang Xu,Hai-Qiao Ni,Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2017
We report high-power single-spatial-mode type-Ⅰ GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system.A straight ridge and three differen...
[期刊论文] 作者:Yi Zhang,Cheng-Ao Yang,Jin-Ming Shang,Yi-Hang Chen,Tian-Fang Wang,Yu Zhang,Ying-Qiang Xu,Bing Liu,Zhi-Chuan, 来源:中国物理B(英文版) 年份:2021
We report a GaSb-based type-Ⅰ quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient A1GaAsSb barrier and chirped GaSb/A1Sb/InAs electron injector.The growth of quaternary......
[期刊论文] 作者:Sheng-Wen Xie,Yu Zhang,Cheng-Ao Yang,Shu-Shan Huang,Ye Yuan,Yi Zhang,Jin-Ming Shang,Fu-Hui Shao,Ying-Qiang, 来源:中国物理B(英文版) 年份:2019
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb bar-riers of the lasers are grown with digital alloy techn...
[期刊论文] 作者:Yi Zhang,Fu-Hui Shao,Cheng-Ao Yang,Sheng-Wen Xie,Shu-Shan Huang,Ye Yuan,Jin-Ming Shang,Yu Zhang,Ying-Qiang, 来源:中国物理B(英文版) 年份:2018
We report a type-II GaSb-based interband cascade laser operating a continuous wave at room temperature. The cas-cade region of interband cascade laser was desig...
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