搜索筛选:
搜索耗时0.1283秒,为你在为你在102,285,761篇论文里面共找到 4 篇相符的论文内容
发布年度:
[期刊论文] 作者：GAO Yuzhu,XU Baiqiao,WANG Zhuo,
来源：稀有金属：英文版 年份：2011
有 4.8 m 的截止波长的 n-InAs/p-InAsSb 异质接面被一步舞液体阶段取向附生(LPE ) 成功地种技术。扫描电子显微镜学(SEM ) 图象和 X 光检查衍射(XRD ) 模式显示出镜子光滑的...
Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-st
[期刊论文] 作者：GAO Yuzhu,GONG Xiuying,FANG We,
来源：稀有金属：英文版 年份：2009
有 4.8 μm 的截止波长的 InAsSb epilayers 被一步舞液体阶段取向附生(LPE ) 成功地在 InAs 底层上种了技术。epilayers 被 X 光检查衍射(XRD ) 描绘， Fourier 变换红外...
Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-st
[期刊论文] 作者：GAO Yuzhu,GONG Xiuying,FANG We,
来源：稀有金属（英文版） 年份：2004
InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy (LPE) technology. The epil...
Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-st
[期刊论文] 作者：GAO Yuzhu,GONG Xiuying,FANG Weizheng,Akiniro Ishida,
来源：稀有金属（英文版） 年份：2009
InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy (LPE) technology. The epil...
相关搜索：
