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[期刊论文] 作者:GAO Yuzhu,GONG Xiuying,FANG We, 来源:稀有金属:英文版 年份:2009
有 4.8 μm 的截止波长的 InAsSb epilayers 被一步舞液体阶段取向附生(LPE ) 成功地在 InAs 底层上种了技术。epilayers 被 X 光检查衍射(XRD ) 描绘, Fourier 变换红外...
[期刊论文] 作者:GAO Yuzhu,GONG Xiuying,FANG We, 来源:稀有金属(英文版) 年份:2004
InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy (LPE) technology. The epil...
[期刊论文] 作者:GAO Yuzhu,GONG Xiuying,FANG Weizheng,Akiniro Ishida, 来源:稀有金属(英文版) 年份:2009
InAsSb epilayers with a cutoff wavelength of 4.8 μm have been successfully grown on InAs substrates by one-step liquid phase epitaxy (LPE) technology. The epil...
[会议论文] 作者:Xianxian Yuan,Qingdong Meng,Hong Tao,Yongqiang Lai,Yi Xin,Jinhua Li,Jiang Dai,Fengying Gong,Xiuying Gao, 来源:第八届北京五洲国际心血管病会议 年份:2014
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