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[期刊论文] 作者：Ling Zhu,Hai-Lian Liang,Xiao-Feng Gu,Jie Xu,
来源：中国物理B（英文版） 年份：2020
In order to reduce the latch-up risk of the traditional low-voltage-triggered silicon controlled rectifier (LVTSCR), a novel LVTSCR with embedded clamping diode...
[期刊论文] 作者：Xi-Kun Feng,Xiao-Feng Gu,Qin-Ling Ma,Yan-Ni Yang,Hai-Lian Liang,
来源：中国物理B（英文版） 年份：2021
Ultra-high-voltage (UHV) junction field-effect transistors (JFETs) embedded separately with the lateral NPN (JFET-LNPN),and the lateral and vertical NPN (JFET-L...
[期刊论文] 作者：Jie Xu,Nai-Long He,Hai-Lian Liang,Sen Zhang,Yu-De Jiang,Xiao-Feng Gu,
来源：中国物理B（英文版） 年份：2021
A novel terminal-optimized triple RESURF LDMOS (TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolar-CMOS-DMOS (BCD) process.By introducing a low concentr...
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