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[会议论文] 作者：Dongwook Kim,Dong Uk Lee,Hyo Jun Lee,Eun Kyu Kim,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
Nanocrystal memory device has been proposed to make breakthrough for high integrated nonvolatile memory device,because the nanocrystals embedded in dielectric layers were created the quantum well to c...
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